Program at a Glance

as of October 15, 2024
*Some of the program or time schedule can be changed.

October 20, 2024 (SUN)
Time Lobby (2F) Sicily Room (1F)
15:00-18:00   Registration
18:00-20:00   Welcome Reception
October 21 (MON)
Time Lobby (2F) Grand Ballroom 1-3 (2F) Grand Ballroom 4 (2F)
09:00-09:55 Registration
&
Exhibition
Opening Session
Chairs: Prof. Hongsik Jeong (UNIST, Republic of Korea) & Dr. Ilya Karpov (Intel Corp., USA)
 
09:15-09:55 [Keynote Talk I] Dr. Yoon Jong Song (Samsung Electronics Co., Ltd., Republic of Korea)

"Overview and Trend of Current Non-Volatile Memory Technology"

 
09:55-10:10 Coffee Break Poster Session
Time for poster presenter to assemble posters
10:10-11:50 [Session 01 - Ferroelectric memories I]
Chair: Dr. Ilya Karpov (Intel Corp., USA)
 
10:10-10:35 Prof. Cheol Seong Hwang (Seoul Nat'l Univ., Republic of Korea)
Ferroelectric Field-Effect Transistors with Unconventional Channel Material for NAND-Type Storage
 
10:35-11:00 Prof. Xiao Gong (Nat'l Univ. of Singapore, Singapore)
Ferroelectric Memories for 3D Integrated Circuits
 
11:00-11:25 Dr. Stefan Slesazeck (NaMLab gGmbH, Germany)
Ferroelectric Tunneling Junctions: Prospects for Memory and beyond
 
11:25-11:50 Dr. Kwangsoo Kim (Samsung Electronics Co., Ltd.,Republic of Korea)
Design Strategy for High Reliable Ferroelectric VNAND
 
11:50-13:20 Lunch Poster Session
Posters will be available
13:20-15:00 [Session 02 - FLASH]
Chair: Dr. Daisaburo Takashima (KIOXIA Corp., Japan)
 
13:20-13:45 Dr. Akira Goda (Micron Technology Inc., Japan)
3D NAND Scaling in the AI Era
 
13:45-14:10 Dr. Tomoya Sanuki (Kioxia, Japan)
Cryogenic Storage Using 3D Flash Memory with 7-Bits per Cell and Beyond for Future Sustainable Bit Cost Scaling
 
14:10-14:35 Prof. Jin-Seong Park (Hanyang Univ., Republic of Korea)
Exploring the Potential of ALD Oxide Semiconductors in 3D V-NAND Applications via Hybrid Channel Integration
 
14:35-15:00 Prof. Biswajit Ray (Colorado State Univ., USA)
Unmasking Vulnerabilities: The Provocative Dance of Device Physics in Flash Storage Security
 
15:00-15:20 Coffee Break
15:20-17:00 [Session 03 - Neuromorphic]
Chair: Dr. Daniele Leonelli (Huawei Tech. Co., Ltd., Belgium)
 
15:20-15:45 Prof. Aaron Thean (Nat'l Univ. of Singapore)
Towards Chips that Rewire Themselves? How Novel Material System Co-Design can Enable Them
 
15:45-16:10 Prof. Hussam Amrouch (Munich Inst. of Robotics and Machine Intelligence, Technical Univ. of Munich, Germany)
Brain-Inspired In-Memory Computing with Ferroelectric Transistors: Hope or Hype?
 
16:10-16:35 Prof. Sangbum Kim (Seoul Nat'l Univ., Republic of Korea)
Neuromorphic Hardware with Phase Change Memory: Exploring Applications of Spiking Boltzmann Machines 
 
16:35-17:00 Prof. Suin Yi (Texas A&M Univ., USA)
Flash Memories for In-Memory Computing
 
17:00-18:30   Poster Session
(Posters will be available through the day)
October 22 (TUE)
Time Lobby (2F) Grand Ballroom 1-3 (2F) Grand Ballroom 4 (2F)
09:00-10:05 Registration
&
Exhibition
[Future Memory Session]
Chair: Prof. Eilam Yalon (Technion - Israel Inst. of Tech., Israel)
 
09:00-09:40 [Keynote Talk II] Dr. Se Ho Lee (SK Hynix Inc., Republic of Korea)

"Future Memory Technology & Value Position"

 
09:40-10:05 Prof. Moshe Ben Shalom (Tel Aviv Univ., Israel)
Ultimately-Thin vdW Ferroelectrics
 
10:05-10:25 Coffee Break  
10:25-12:05 [Session 04 - PCRAM]
Chair: Prof. Eilam Yalon (Technion - Israel Inst. of Tech., Israel)
 
10:25-10:50 Prof. Taehoon Lee (Kyungpook Nat'l Univ., Republic of Korea)
What Makes Chalcogenides Unique for Memory Applications
 
10:50-11:15 Prof. Wei Zhang (Xi'an Jiaotong Univ., China)
Machine-Learning-Driven Atomistic Simulations of Phase-Change Materials at Device Scale
 
11:15-11:40 Dr. Min Zhu (Shanghai Inst. of Microsystem and Information Tech., CAS, China)
Electrical Switch: One Element Can Make
 
11:40-12:05 Prof. Mann-Ho Cho (Yonsei Univ., Republic of Korea)
Control of Confinement Layer and Chemical Bonding  in Superlattice of {GeTe/Sb2Te3}n for iPCM
 
12:05-12:30 Prof. Zhitang Song (Shanghai Inst. of Microsystem and Information Tech., CAS, China)
High-Performance Phase Change Memory Technology and Its Multilevel Resistance Characteristics
 
12:30-14:00 Lunch Poster Session
Posters will be available
14:00-16:05 [Session 05 - MRAM]
Chair: Dr. Daisaburo Takashima (KIOXIA Corp., Japan)
 
14:00-14:25 Prof. Young Keun Kim (Korea Univ., Republic of Korea)
Exploring Novel Spin-Orbit Torque Materials for Efficient Magnetization Switching in MRAM Applications
 
14:25-14:50 Dr. Maxwel Gama Monteiro (IMEC, Belgium)
Approaches For Field-Free Switching In Scaled, CMOS Compatible SOT-MRAM Devices
 
14:50-15:15 Dr. Masaru Toko (KIOXIA Corp., Japan)
Demonstration of High-Speed Writing and High Retention in 14nm MTJ for High-Density STT-MRAM
 
15:15-15:40 Dr. Hiroaki Yoda (YODA-S, Inc., Japan)
Ultra-Low Power SOT-MRAM with Strain-Induced Magnetic Anisotropy
 
15:40-16:05 Prof. Tetsuo Endoh (Tohoku Univ., Japan)
STT/SOT-MRAM and NV-AI Processor as Its Application
 
16:05-16:25 Coffee Break  
16:25-17:30 Poster Session Poster Session
(Posters will be available through the day)
17:30-18:30 Break for setting to banquet
18:30-21:00 Banquet  
October 23 (WED)
Time Lobby (2F) Grand Ballroom 1-3 (2F) Grand Ballroom 4 (2F)
09:00-10:05 Registration
&
Exhibition
[NVDRAM\Ferroelectric Session]
Chair: Dr. Scott Sills (Micron Technology Inc., USA)
 
09:00-09:40 [Keynote Talk III] Dr. Matthew Hollander (Micron Technology Inc., USA)

"Engineering Ferroelectric Memory for High Density and High Performance"

 
09:40-10:05 Prof. Suman Datta (Georgia Inst. of Tech., USA)
Emerging Ferroelectric Memory: Opportunity and Challenges
 
10:05-10:25 Coffee Break  
10:25-12:30 [Session 06 - Ferroelectric memories II]
Chair: Dr. Daniele Leonelli (Huawei Tech. Co., Ltd., Belgium)
 
10:25-10:50 Prof. Kai Ni (Univ. of Notre Dame, USA)
Enabling High Density Data Storage and Computing in the Next Generation Solid State Drive with Ferroelectrics
 
10:50-11:15 Dr. Dominik Kleimaier (GlobalFoundries Module One LLC & Co. KG, Germany)
Charge Trapping and Endurance Degradation in Ferroelectric Field-Effect Transistors
 
11:15-11:40 Prof. Sanghun Jeon (KAIST, Republic of Korea)
Opportunity of Hafnia Ferroelectrics for Flash-type Device Application
 
11:40-12:05 Prof. Xiao Yu (Xidian Univ., China)
Impact of Oxygen Vacancy on Ferroelectric Characteristics and Reliability of Doped-HfO2 Thin Films
 
12:05-12:30 Dr. Stefan Muller (Ferroelectric Memory Company, Germany)
Ferroelectric Hafnia: A New Age for FRAM Has Started
 
12:30-13:45 Lunch Poster Session
Poster presenters can remove their posters
13:45-15:25 [Session 07 -  RRAM]
Chair: Dr. Scott Sills (Micron Technology Inc., USA)
 
13:45-14:10 Dr. Susanne Hoffmann-Eifert (Peter-Grünberg-Institute, Forschungszentrum Jülich, Germany)
Analysis of the Electronic- and Micro-Structure of Al2O3/TiOx- Memristive Cells Switched in Filamentary- and Area-Mode and Consequences for Neural Network Inference Tasks
 
14:10-14:35 Prof. Wei Lu (Univ. of Michigan, USA)
Prospects and Challenges of RRAM-Based Compute-in Memory Systems
 
14:35-15:00 Dr. Xiaoxin Xu (Inst. of Microelectronics of the Chinese Academy of Sciences, China)
Three-Dimensional Integration and Application of RRAM
 
15:00-15:25 Prof. Tae-Sik Yoon (UNIST, Republic of Korea)
Filamentary and Interface-Type Analog Memristors with Metal-Oxides for Non-Volatile Memory and Neuromorphic Computing Applications 
 
15:25-15:45 Coffee Break  
15:45-16:35 [Session 08 - NVDRAM]
Chair: Dr. Scott Sills (Micron Technology Inc., USA)
 
15:45-16:10 Prof. Shimeng Yu (Georgia Inst. of Tech., USA)
Persistent DRAM with Oxide Channel Transistors for Last Level Cache
 
16:10-16:35 Dr. Gaobo Xu (Chinese Academy of Sciences, China)
A Multibit 2T0C DRAM with Ultra-Long Retention: Materials, Devices and Integration
 
16:35-17:00 Poster Awards and Closing Ceremony
Chairs: Prof. Hongsik Jeong (UNIST, Republic of Korea) & Dr. Ilya Karpov (Intel Corp., USA)
 
Organizers
Supporters
Exhibitors