Invited Speakers

Topic_1 Flash

3D NAND Scaling in the AI era

Dr. Akira Goda Micron, Japan

Topic_1 Flash

Exploring the Potential of ALD Oxide Semiconductors in 3D V-NAND Applications via Hybrid Channel Integration

Prof. Jin-Seong Park Hanyang University, Republic of Korea
Biography

Topic_1 Flash

Cryogenic Storage using 3D Flash Memory with 7-Bits per Cell and Beyond for Future Sustainable Bit Cost Scaling

Tomoya Sanuki Kioxia, Japan
Biography

Topic_2 MRAM

Recent progresses in MRAMs and Low power AI Processors with CMOS/MTJ Hybrid Technology

Prof. Tetsuo Endoh Tohoku University, Japan
Biography

Topic_2 MRAM

Spin-Orbit Torque Materials for the Next-Generation MRAM

Prof. Young Keun Kim Korea University, Seoul, Korea
Biography

Topic_2 MRAM

Ultra-low power SOT-MRAM with strain-induced magnetic anisotropy

Dr. Hiroaki Yoda YODA-S, Inc., Japan
Biography

Topic_2 MRAM

Demonstration of high performance with High-speed writing and High Retention in 14nm MTJ for High-Density STT-MRAM

Dr. Toko Masaru Kioxia, Japan
Biography

Topic_3 PCRAM

Control of confinement layer and chemical bonding in Superlattice of {GeTe/Sb2Te3}n for iPCM

Prof. Mann-Ho Cho Yonsei University, Republic of Korea
Biography

Topic_3 PCRAM

Interface vs Bulk Effects in PCM

Prof. Eilam Yalon Technion – Israel Institute of Technology, Israel
Biography

Topic_3 PCRAM

Device-scale atomistic modeling of phase-change memory enabled by machine-learned potentials

Prof. Wei ZHANG Xi'an Jiaotong University, China
Biography

Topic_4 RRAM

Analysis of the Electronic Structure and Microstructure of Al2O3/TiOx-based Memristive Devices Switched in Filamentary- and Area-Mode and Consequences for Neural Network Inference Tasks

Dr. Susanne Hoffmann-Eifert Forschungszentrum Jülich GmbH, Germany
Biography

Topic_4 RRAM

Prospects and Challenges of RRAM-based Compute-in-Memory Systems

Prof. Wei Lu University of Michigan, USA
Biography

Topic_4 RRAM

Filamentary and interface-type analog memristors with metal oxides for non-volatile memory and neuromorphic computing applications

Prof. Tae-Sik Yoon UNIST, Republic of Korea
Biography

Topic_4 RRAM

3D integration and application of RRAM.

Professor Xiaoxin Xu Institute of Microelectronics (IME) of the Chinese Academy of Sciences, China
Biography

Topic_5 FeRAM

Hafnium oxide-based ferroelectric memories: Where do they find a place?

Prof. Sourav De College of Semiconductor Research, National Tsing Hua University, Taiwan
Biography

Topic_5 FeRAM

Ferroelectric field-effect transistors with unconventional channel material for NAND-type storage

Prof. Cheol Seong Hwang Seoul National University (SNU), Republic of Korea
Biography

Topic_5 FeRAM

Design Strategy for High Reliable Ferroelectric VNAND

Dr. Kwangsoo Kim Samsung Electronics Co., Ltd., Republic of Korea
Biography

Topic_5 FeRAM

Charge trapping and endurance degradation in ferroelectric FETs

Dr. Dominik Kleimaier GlobalFoundries, Germany
Biography

Topic_5 FeRAM

Ferroelectric hafnia: A new age for FRAM has started

Dr. Stefan Mueller Ferroelectric Memory Company (FMC), Germany
Biography

New memory concepts   or    Topic_5 FeRAM

Ultimately Thin Sliding Ferroelectricity

Prof. Moshe Ben Shalom Tel Aviv University, Israel
Biography

Topic_5 FeRAM

Ferroelectric tunneling junctions: prospects for memory and beyond

Dr. Stefan Slesazeck NaMLab gGmbH, Dresden, Germany
Biography

Topic_5 FeRAM

The Disturb-Free Operation Scheme andApplication for Multilevel Cell Ferroelectric FET NAND Array

Prof. Xiao YU Xidian University, China
Biography

Topic_5 FeRAM

Ferroelectric Memories for 3D Integrated Circuits

Prof. Gong Xiao National University of Singapore, Singapore
Biography

Topic_6 NVDRAM

A Multibit 2T0C DRAM with Ultra-Long Retention: Materials, Devices, and Integration

Prof. Gaobo Xu Institute of Microelectronics of the Chinese Academy of Sciences, China
Biography

Topic_6 NVDRAM

Persistent DRAM with Oxide Channel Transistors for Last Level Cache

Prof. Shimeng Yu Georgia Institute of Technology, USA
Biography

Topic_6 NVDRAM

Emerging Ferroelectric Memory: Opportunity and Challenges

Prof. Suman Datta School of Electrical and Computer Engineering Georgia Institute of Technology, USA
Biography

Topic_7 Selector

What makes chalcogenides unique for memory applications

Prof. Tae Hoon Lee Kyungpook National University, Republic of Korea
Biography

Topic_7 Selector

Electrical Switch: One Element Can Make.

Prof. Min Zhu Shanghai Institute of Microsystem and Information Technology, China
Biography

Topic_8 Neuromorphic

Brain-inspired In-memory Computing with Ferroelectric Transistors: Hope or Hype?

Prof. Hussam Amrouch Technical University of Munich, Germany
Biography

Topic_8 Neuromorphic

Towards Chips that Rewire Themselves? …How Novel Material-System Co-Design can enable them

Dr. Aaron National University of Singapore, Singapore
Biography

Topic_8 Neuromorphic

Neuromorphic Hardware with Phase Change Memory: Exploring Applications of Spiking Boltzmann Machines

Prof. Sangbum Kim Seoul National University, Republic of Korea
Biography

Topic_8 Neuromorphic

Flash Memories for In-Memory Computing

Prof. Su-in Yi Texas A&M University, USA
Biography