- 1. Flash
- 2. MRAM
- 3. PCRAM
- 4. RRAM/CBRAM
- 5. FeRAM
- 6. NVDRAM
- 7. Selector
- 8. Neuromorphic Materials and Devices
Topic_1 Flash
Cryogenic Storage using 3D Flash Memory with 7-Bits per Cell and Beyond for Future Sustainable Bit Cost Scaling
Tomoya Sanuki Kioxia, Japan
Topic_1 Flash
Exploring the Potential of ALD Oxide Semiconductors in 3D V-NAND Applications via Hybrid Channel Integration
Prof. Jin-Seong Park Hanyang University, Republic of Korea
Topic_1 Flash
Unmasking Vulnerabilities: The Provocative Dance of Device Physics in Flash Storage Security
Prof. Biswajit Ray Colorado State University, USA
Topic_2 MRAM
Exploring Novel Spin-Orbit Torque Materials for Efficient Magnetization Switching in MRAM Applications
Prof. Young Keun Kim Korea University, Seoul, Korea
Topic_2 MRAM
Approaches For Field-free Switching In Scaled, CMOS Compatible SOT-MRAM Devices
Dr. Maxwel Gama Monteiro Jr. Imec, Belgium
Topic_2 MRAM
Demonstration of High-speed writing and High Retention in 14nm MTJ for High-Density STT-MRAM
Dr. Toko Masaru Kioxia, Japan
Topic_2 MRAM
Ultra-low power SOT-MRAM with strain-induced magnetic anisotropy
Dr. Hiroaki Yoda YODA-S, Inc., Japan
Topic_2 MRAM
STT/SOT-MRAM and NV-AI Processor as its Application
Prof. Tetsuo Endoh Tohoku University, Japan
Topic_3 PCRAM
What makes chalcogenides unique for memory applications
Prof. Tae Hoon Lee Kyungpook National University, Republic of Korea
Topic_3 PCRAM
Machine-learning-driven Atomistic Simulations of Phase-change Materials at Device Scale
Prof. Wei ZHANG Xi'an Jiaotong University, China
Topic_3 PCRAM
Control of confinement layer and chemical bonding in Superlattice of {GeTe/Sb2Te3}n for iPCM
Prof. Mann-Ho Cho Yonsei University, Republic of Korea
Topic_3 PCRAM
High-performance Phase Change Memory Technology and its Multi-level Resistance Characteristics
Prof. Zhitang SONG Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, China
Topic_4 RRAM
Analysis of the Electronic Structure and Microstructure of Al2O3/TiOx-based Memristive Devices Switched in Filamentary- and Area-Mode and Consequences for Neural Network Inference Tasks
Dr. Susanne Hoffmann-Eifert Forschungszentrum Jülich GmbH, Germany
Topic_4 RRAM
Prospects and Challenges of RRAM-based Compute-in-Memory Systems
Prof. Wei Lu University of Michigan, USA
Topic_4 RRAM
3D integration and application of RRAM.
Professor Xiaoxin Xu Institute of Microelectronics (IME) of the Chinese Academy of Sciences, China
Topic_4 RRAM
Filamentary and interface-type analog memristors with metal oxides for non-volatile memory and neuromorphic computing applications
Prof. Tae-Sik Yoon UNIST, Republic of Korea
Topic_5 FeRAM
Ferroelectric field-effect transistors with unconventional channel material for NAND-type storage
Prof. Cheol Seong Hwang Seoul National University (SNU), Republic of Korea
Topic_5 FeRAM
Ferroelectric hafnia: A new age for FRAM has started
Dr. Stefan Mueller Ferroelectric Memory Company (FMC), Germany
Topic_5 FeRAM
Ferroelectric tunneling junctions: prospects for memory and beyond
Dr. Stefan Slesazeck NaMLab gGmbH, Dresden, Germany
Topic_5 FeRAM
Design Strategy for High Reliable Ferroelectric VNAND
Dr. Kwangsoo Kim Samsung Electronics Co., Ltd., Republic of Korea
Topic_5 FeRAM
Enabling High Density Data Storage and Computing in the Next Generation Solid State Drive with Ferroelectrics
Prof. Kai Ni University of Notre Dame, USA
Topic_5 FeRAM
Charge trapping and endurance degradation in ferroelectric FETs
Dr. Dominik Kleimaier GlobalFoundries, Germany
Topic_5 FeRAM
Opportunity of Hafnia Ferroelectrics for Flash-type Device Application
Prof. Sanghun Jeon KAIST, Republic of Korea
Topic_5 FeRAM
Impact of Oxygen Vacancy on Ferroelectric Characteristics and Reliability of Doped-HfO2 Thin Films
Prof. Xiao YU Xidian University, China
Topic_5 FeRAM
Ferroelectric Memories for 3D Integrated Circuits
Prof. Gong Xiao National University of Singapore, Singapore
Topic_6 NVDRAM
Emerging Ferroelectric Memory: Opportunity and Challenges
Prof. Suman Datta School of Electrical and Computer Engineering Georgia Institute of Technology, USA
Topic_6 NVDRAM
Persistent DRAM with Oxide Channel Transistors for Last Level Cache
Prof. Shimeng Yu Georgia Institute of Technology, USA
Topic_6 NVDRAM
A Multibit 2T0C DRAM with Ultra-Long Retention: Materials, Devices, and Integration
Prof. Gaobo Xu Institute of Microelectronics of the Chinese Academy of Sciences, China
Topic_7 Selector
Electrical Switch: One Element Can Make.
Prof. Min Zhu Shanghai Institute of Microsystem and Information Technology, China
Topic_8 Neuromorphic
Towards Chips that Rewire Themselves? …How Novel Material-System Co-Design can enable them
Prof. Aaron Thean National University of Singapore, Singapore
Topic_8 Neuromorphic
Brain-inspired In-memory Computing with Ferroelectric Transistors: Hope or Hype?
Prof. Hussam Amrouch Technical University of Munich, Germany
Topic_8 Neuromorphic
Neuromorphic Hardware with Phase Change Memory: Exploring Applications of Spiking Boltzmann Machines
Prof. Sangbum Kim Seoul National University, Republic of Korea
