as of October 15, 2024
*Some of the program or time schedule can be changed.
| October 20 (SUN) | ||
| Time | Lobby (2F) | Sicily Room (1F) |
|---|---|---|
| 15:00-18:00 | Registration | |
| 18:00-20:00 | Welcome Reception | |
| October 21 (MON) | |||
| Time | Lobby (2F) | Grand Ballroom 1-3 (2F) | Grand Ballroom 4 (2F) |
|---|---|---|---|
| 09:00-09:55 | Registration & Exhibition |
Opening Session Chairs: Prof. Hongsik Jeong (UNIST, Republic of Korea) & Dr. Ilya Karpov (Intel Corp., USA) |
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| 09:15-09:55 | [Keynote Talk I] Dr. Yoon Jong Song (Samsung Electronics Co., Ltd., Republic of Korea) "Overview and Trend of Emerging Non-Volatile Memory Technology" |
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| 09:55-10:10 | Coffee Break |
Poster Session Time for poster presenter to assemble posters |
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| 10:10-11:50 | [Session 01 - Ferroelectric memories I] Chair: Dr. Ilya Karpov (Intel Corp., USA) |
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| 10:10-10:35 | Prof. Cheol Seong Hwang (Seoul Nat'l Univ., Republic of Korea) Ferroelectric Field-Effect Transistors with Unconventional Channel Material for NAND-Type Storage |
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| 10:35-11:00 | Dr. Stefan Mueller (Ferroelectric Memory Company, Germany) Ferroelectric Hafnia: A New Age for FRAM Has Started |
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| 11:00-11:25 | Dr. Stefan Slesazeck (NaMLab gGmbH, Germany) Ferroelectric Tunneling Junctions: Prospects for Memory and Beyond |
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| 11:25-11:50 | Dr. Kwangsoo Kim (Samsung Electronics Co., Ltd., Republic of Korea) Design Strategy for High Reliable Ferroelectric VNAND |
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| 11:50-13:20 | Lunch (Capri Room (2F)) | Poster Session Posters will be available |
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| 13:20-15:00 | [Session 02 - FLASH]
Chair: Dr. Daisaburo Takashima (KIOXIA Corp., Japan) |
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| 13:20-13:45 | Dr. Akira Goda (Micron Technology Inc., Japan) 3D NAND Scaling in the AI Era |
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| 13:45-14:10 | Dr. Tomoya Sanuki (KIOXIA Corp., Japan) Cryogenic Storage Using 3D Flash Memory with 7-Bits per Cell and Beyond for Future Sustainable Bit Cost Scaling |
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| 14:10-14:35 | Prof. Jin-Seong Park (Hanyang Univ., Republic of Korea) Exploring the Potential of ALD Oxide Semiconductors in 3D V-NAND Applications via Hybrid Channel Integration |
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| 14:35-15:00 | Prof. Biswajit Ray (Colorado State Univ., USA) Unmasking Vulnerabilities: The Provocative Dance of Device Physics in Flash Storage Security |
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| 15:00-15:20 | Coffee Break | ||
| 15:20-17:00 | [Session 03 - Neuromorphic] Chair: Dr. Daniele Leonelli (Huawei Tech. Co., Ltd., Belgium) |
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| 15:20-15:45 | Prof. Aaron Thean (Nat'l Univ. of Singapore, Singapore) Towards Chips that Rewire Themselves? How Novel Material System Co-Design can Enable Them |
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| 15:45-16:10 | Prof. Hussam Amrouch (Munich Inst. of Robotics and Machine Intelligence, Technical Univ. of Munich, Germany) Brain-Inspired In-Memory Computing with Ferroelectric Transistors: Hope or Hype? |
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| 16:10-16:35 | Prof. Sangbum Kim (Seoul Nat'l Univ., Republic of Korea) Neuromorphic Hardware with Phase Change Memory: Exploring Applications of Spiking Boltzmann Machines |
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| 16:35-17:00 | Prof. Suin Yi (Texas A&M Univ., USA) Flash Memories for In-Memory Computing |
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| 17:00-18:30 | Poster Session (Posters will be available through the day) |
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| October 22 (TUE) | |||
| Time | Lobby (2F) | Grand Ballroom 1-3 (2F) | Grand Ballroom 4 (2F) |
|---|---|---|---|
| 09:00-10:05 | Registration & Exhibition |
[Future Memory Session] Chair: Prof. Changwook Jeong (UNIST, Republic of Korea) |
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| 09:00-09:40 | [Keynote Talk II] Dr. Se Ho Lee (SK Hynix Inc., Republic of Korea) "Future Memory Technology & Value Position" |
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| 09:40-10:05 | Prof. Moshe Ben Shalom (Tel Aviv Univ., Israel) Ultimately-Thin vdW Ferroelectrics |
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| 10:05-10:25 | Coffee Break | ||
| 10:25-12:30 | [Session 04 - PCRAM] Chair: Prof. Changwook Jeong (UNIST, Republic of Korea) |
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| 10:25-10:50 | Prof. Taehoon Lee (Kyungpook Nat'l Univ., Republic of Korea) What Makes Chalcogenides Unique for Memory Applications |
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| 10:50-11:15 | Prof. Wei Zhang (Xi'an Jiaotong Univ., China) Machine-Learning-Driven Atomistic Simulations of Phase-Change Materials at Device Scale |
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| 11:15-11:40 | Dr. Min Zhu (Shanghai Inst. of Microsystem and Information Tech., CAS, China) Electrical Switch: One Element Can Make |
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| 11:40-12:05 | Prof. Mann-Ho Cho (Yonsei Univ., Republic of Korea) Control of Confinement Layer and Chemical Bonding in Superlattice of {GeTe/Sb2Te3}n for iPCM |
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| 12:05-12:30 | Prof. Zhitang Song (Shanghai Inst. of Microsystem and Information Tech., CAS, China) High-Performance Phase Change Memory Technology and Its Multilevel Resistance Characteristics |
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| 12:30-14:00 | Lunch (Capri Room (2F)) | Poster Session Posters will be available |
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| 14:00-16:05 | [Session 05 - MRAM] Chair: Dr. Daisaburo Takashima (KIOXIA Corp., Japan) |
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| 14:00-14:25 | Prof. Young Keun Kim (Korea Univ., Republic of Korea) Exploring Novel Spin-Orbit Torque Materials for Efficient Magnetization Switching in MRAM Applications |
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| 14:25-14:50 | Dr. Maxwel Gama Monteiro (IMEC, Belgium) Approaches For Field-Free Switching In Scaled, CMOS Compatible SOT-MRAM Devices |
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| 14:50-15:15 | Dr. Masaru Toko (KIOXIA Corp., Japan) Demonstration of High-Speed Writing and High Retention in 14nm MTJ for High-Density STT-MRAM |
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| 15:15-15:40 | Dr. Hiroaki Yoda (YODA-S, Inc., Japan) Ultra-Low Power SOT-MRAM with Strain-Induced Magnetic Anisotropy |
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| 15:40-16:05 | Prof. Tetsuo Endoh (Tohoku Univ., Japan) STT/SOT-MRAM and NV-AI Processor as Its Application |
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| 16:05-16:25 | Coffee Break | ||
| 16:25-17:30 | Poster Session (Posters will be available through the day) |
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| 17:30-18:30 | Break for setting to banquet | ||
| 18:30-21:00 | Banquet (Capri Room (2F)) | ||
| October 23 (WED) | |||
| Time | Lobby (2F) | Grand Ballroom 1-3 (2F) | Grand Ballroom 4 (2F) |
|---|---|---|---|
| 09:00-10:05 | Registration & Exhibition |
[NVDRAM\Ferroelectric Session] Chair: Dr. Scott Sills (Micron Technology Inc., USA) |
|
| 09:00-09:40 | [Keynote Talk III] Dr. Matthew Hollander (Micron Technology Inc., USA) "Engineering Ferroelectric Memory for High Density and High Performance" |
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| 09:40-10:05 | Prof. Suman Datta (Georgia Inst. of Tech., USA) Emerging Ferroelectric Memory: Opportunity and Challenges |
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| 10:05-10:25 | Coffee Break | ||
| 10:25-12:30 | [Session 06 - Ferroelectric memories II] Chair: Dr. Daniele Leonelli (Huawei Tech. Co., Ltd., Belgium) |
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| 10:25-10:50 | Prof. Kai Ni (Univ. of Notre Dame, USA) Enabling High Density Data Storage and Computing in the Next Generation Solid State Drive with Ferroelectrics |
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| 10:50-11:15 | Dr. Dominik Kleimaier (GlobalFoundries Module One LLC & Co. KG, Germany) Charge Trapping and Endurance Degradation in Ferroelectric Field-Effect Transistors |
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| 11:15-11:40 | Prof. Sanghun Jeon (KAIST, Republic of Korea) Opportunity of Hafnia Ferroelectrics for Flash-type Device Application |
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| 11:40-12:05 | Prof. Xiao Yu (Xidian Univ., China) Impact of Oxygen Vacancy on Ferroelectric Characteristics and Reliability of Doped-HfO2 Thin Films |
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| 12:05-12:30 | Prof. Xiao Gong (Nat'l Univ. of Singapore, Singapore) Ferroelectric Memories for 3D Integrated Circuits |
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| 12:30-13:45 | Lunch (Capri Room (2F)) | ||
| 13:45-15:25 | [Session 07 - RRAM] Chair: Dr. Scott Sills (Micron Technology Inc., USA) |
Poster Session Poster presenters can remove their posters |
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| 13:45-14:10 | Dr. Susanne Hoffmann-Eifert (Peter-Grünberg-Institute, Forschungszentrum Jülich, Germany) Analysis of the Electronic- and Micro-Structure of Al2O3/TiOx- Memristive Cells Switched in Filamentary- and Area-Mode and Consequences for Neural Network Inference Tasks |
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| 14:10-14:35 | Prof. Wei Lu (Univ. of Michigan, USA) Prospects and Challenges of RRAM-Based Compute-in Memory Systems |
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| 14:35-15:00 | Dr. Xiaoxin Xu (Inst. of Microelectronics of the Chinese Academy of Sciences, China) Three-Dimensional Integration and Application of RRAM |
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| 15:00-15:25 | Prof. Tae-Sik Yoon (UNIST, Republic of Korea) Filamentary and Interface-Type Analog Memristors with Metal-Oxides for Non-Volatile Memory and Neuromorphic Computing Applications |
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| 15:25-15:45 | Coffee Break | ||
| 15:45-16:35 | [Session 08 - NVDRAM] Chair: Dr. Scott Sills (Micron Technology Inc., USA) |
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| 15:45-16:10 | Prof. Shimeng Yu (Georgia Inst. of Tech., USA) Persistent DRAM with Oxide Channel Transistors for Last Level Cache |
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| 16:10-16:35 | Dr. Gaobo Xu (Chinese Academy of Sciences, China) A Multibit 2T0C DRAM with Ultra-Long Retention: Materials, Devices and Integration |
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| 16:35-17:00 | Poster Awards and Closing Ceremony Chairs: Prof. Hongsik Jeong (UNIST, Republic of Korea) & Dr. Ilya Karpov (Intel Corp., USA) |
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